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Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures

Influence of Zn doping profiles on excitation dependence of photoluminescence intensity in InGaAsP heterostructures

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  • Author(s): D.K. Young 1 ; C.L. Reynolds 2 ; V. Swaminathan 3 ; F.S. Walters 4
    • View affiliations
    • Affiliations: 1: Engineering and Sciences Department, California Institute of Technology, Pasadena, USA
      2: Department of Materials Science and Engineering, North Carolina State University, Raleigh, USA
      3: Department of Materials Science and Engineering, Army Research Laboratory, Aldelphi, USA
      4: Department of Materials Science and Engineering, NanoOpto Corporation, Somerset, USA
  • Source: Volume 41, Issue 18, 1 September 2005, p. 1008 – 1010
    DOI:  10.1049/el:20052347 , Print ISSN 0013-5194, Online ISSN 1350-911X
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It is known that the Zn doping profile in strained multi-quantum-well (MQW) InGaAsP lasers strongly affects the electro-optical characteristics of these devices and their temperature sensitivity. A systematic investigation of the excitation dependence of the active layer photoluminescence (PL) intensity from compressively strained InGaAsP MQW pin laser material with different Zn doping profiles is described. When the pn junction lies within the active region, the excitation dependence of the PL intensity is superlinear at low excitation and linear at higher excitation. As the Zn profile is set back from the heterointerface creating a displaced pn junction from the active region, the excitation dependence is superlinear and linear at 300 K but becomes linear for all excitation powers at 77 K. The implications of these observations are discussed.

Inspec keywords: p-n junctions; doping profiles; quantum well lasers; III-V semiconductors; indium compounds; zinc; gallium arsenide; photoluminescence

Other keywords: strained multiquantum-well lasers; photoluminescence intensity; temperature sensitivity; electro-optical characteristics; 77 K; excitation dependence; InGaAsP:Zn; pn junction; doping profiles; 300 K

Subjects: Impurity concentration, distribution, and gradients; Semiconductor lasers; Lasing action in semiconductors; Semiconductor doping; Photoluminescence in II-VI and III-V semiconductors; Semiconductor junctions; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

References

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      • V. Swaminathan , P.J. Anthony , J.R. Pawlik , W.T. Tsang . Temperature and excitation dependence of active layer photoluminescence in (Al,Ga)As laser heterostructures. J. Appl. Phys. , 2623 - 2629
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      • A. Jaeger , W.D. Sun , F. Pollak , C.L. Reynolds , M. Geva . Characterization of p-dopant interdiffusion in 1.3 μm InGaAsP/InP laser structures using modulation spectroscopy. J. Appl. Phys. , 2020 - 2024
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      • G. Belenky , L. Shterengas , C.W. Trussell , C.L. Reynolds , M.S. Hybertsen , R. Menna , S. Luryi , J. Xu , A. Zosiavsky . (2002) Trends in semiconductor laser design: balance between leakage, gain, and loss in InGaAsP/InP multiquantum well lasers’‘Future trends in microelectronics. The nanomillenium’.
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