Dependence of AlGaN-based SAW oscillator frequency on temperature
Dependence of AlGaN-based SAW oscillator frequency on temperature
- Author(s): R. Rimeika ; A. Sereika ; P. Kaz̆dailis ; Q. Fareed ; R. Gaska ; D. Ciplys ; M.S. Shur
- DOI: 10.1049/el:20040394
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- Author(s): R. Rimeika 1 ; A. Sereika 1 ; P. Kaz̆dailis 1 ; Q. Fareed 2 ; R. Gaska 2 ; D. Ciplys 3 ; M.S. Shur 3
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View affiliations
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Affiliations:
1: Department of Radiophysics, Vilnius University, Vilnius, Lithuania
2: Department of Radiophysics, Sensor Electronic Technology, Inc., Columbia, USA
3: Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, USA
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Affiliations:
1: Department of Radiophysics, Vilnius University, Vilnius, Lithuania
- Source:
Volume 40, Issue 10,
13 May 2004,
p.
637 – 638
DOI: 10.1049/el:20040394 , Print ISSN 0013-5194, Online ISSN 1350-911X
A SAW delay-line oscillator based on an AlxGa1−xN-on-sapphire structure is presented, and its frequency dependence on temperature has been measured. The temperature coefficient of frequency −69 ppm/K has been found for the AlxGa1−xN layer thickness 1.7 µm, Al molar amount x=0.5, and operation frequency 226 MHz.
Inspec keywords: surface acoustic wave oscillators; aluminium compounds; surface acoustic wave delay lines; gallium compounds; III-V semiconductors
Other keywords:
Subjects: Acoustic wave devices
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