A high-gain and broadband distributed amplifier using high-performance high-reliability InGaP/GaAs HBTs is reported. A novel two-block configuration is used in gain cells in this distributed amplifier, which achieves a bandwidth of 80 GHz with a gain of 16 dB, resulting in a gain-bandwidth product of 504 GHz.
Inspec keywords: wideband amplifiers; gallium compounds; gallium arsenide; III-V semiconductors; indium compounds; semiconductor device reliability; distributed amplifiers; heterojunction bipolar transistors
Other keywords:
Subjects: Bipolar transistors; Reliability; Amplifiers
References
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