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Method for determination of carrier capture cross-sections at Si/SiO2 interface

Method for determination of carrier capture cross-sections at Si/SiO2 interface

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A simple DC method for measurement of the capture cross-sections at the Si/SiO2 interface is presented. The method combines the measurement of the interface recombination current under the gate of the MOS transistor with the measurement of the subthreshold slope. The results are in good agreement with previous results obtained by AC small-signal and transient methods.

Inspec keywords: silicon; carrier mobility; elemental semiconductors; interface states; semiconductor-insulator boundaries; silicon compounds

Other keywords: AC small-signal methods; interface recombination current; DC method; carrier capture cross-sections; AC transient methods; subthreshold slope; Si-SiO2; Si/SiO2 interface

Subjects: Electrical properties of metal-insulator-semiconductor structures; Low-field transport and mobility; piezoresistance (semiconductors/insulators); Charge carriers: generation, recombination, lifetime, and trapping (semiconductors/insulators)

References

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      • C.-T. Sah . (1991) Fundamentals of solid-state electronics.
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      • G. Groeseneken , H.E. Maes , N. Beltran , R.F. De Keersmaecker . A reliable approach to charge-pumping measurements in MOS transistors. IEEE Trans. Electron Devices , 42 - 53
    5. 5)
      • E.H. Nicollian , A. Goetzberger . The Si-SiO2 electrical properties as determined by the MIS conductance technique. Bell Syst. Tech. J.
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