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A non-quasi-static MOSFET model for circuit simulation, which is based on the carrier-transit delay responsible for the channel formation during switching on, has been developed. The developed model was implemented into a circuit simulator, and good agreement of transient drain current with 2D simulation results was confirmed.
Inspec keywords: semiconductor device models; digital simulation; switching; carrier density; circuit simulation; carrier mobility; MOSFET
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Subjects: Computer-aided circuit analysis and design; Insulated gate field effect transistors; Semiconductor device modelling, equivalent circuits, design and testing