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Non-quasi-static model for MOSFET based on carrier-transit delay

Non-quasi-static model for MOSFET based on carrier-transit delay

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A non-quasi-static MOSFET model for circuit simulation, which is based on the carrier-transit delay responsible for the channel formation during switching on, has been developed. The developed model was implemented into a circuit simulator, and good agreement of transient drain current with 2D simulation results was confirmed.

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