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40 Gbit/s nin InP Mach–Zehnder modulator with a π voltage of 2.2 V

40 Gbit/s nin InP Mach–Zehnder modulator with a π voltage of 2.2 V

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Using an nin heterostructure, a travelling-wave Mach–Zehnder modulator on an InP substrate has been developed. An extremely small π voltage (Vπ) of 2.2 V has been obtained, even for a short signal-electrode length of 3 mm. Wavelength-insensitive extinction characteristics and 40 Gbit/s operation are described.

References

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