40 Gbit/s n–i–n InP Mach–Zehnder modulator with a π voltage of 2.2 V
40 Gbit/s n–i–n InP Mach–Zehnder modulator with a π voltage of 2.2 V
- Author(s): K. Tsuzuki ; T. Ishibashi ; T. Ito ; S. Oku ; Y. Shibata ; R. Iga ; Y. Kondo ; Y. Tohmori
- DOI: 10.1049/el:20030939
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- Author(s): K. Tsuzuki 1 ; T. Ishibashi 1 ; T. Ito 1 ; S. Oku 1 ; Y. Shibata 1 ; R. Iga 1 ; Y. Kondo 1 ; Y. Tohmori 1
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View affiliations
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Affiliations:
1: NTT Photonics Laboratories, NTT Corporation, Atsugi-shi, Japan
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Affiliations:
1: NTT Photonics Laboratories, NTT Corporation, Atsugi-shi, Japan
- Source:
Volume 39, Issue 20,
2 October 2003,
p.
1464 – 1466
DOI: 10.1049/el:20030939 , Print ISSN 0013-5194, Online ISSN 1350-911X
Using an n–i–n heterostructure, a travelling-wave Mach–Zehnder modulator on an InP substrate has been developed. An extremely small π voltage (Vπ) of 2.2 V has been obtained, even for a short signal-electrode length of 3 mm. Wavelength-insensitive extinction characteristics and 40 Gbit/s operation are described.
Inspec keywords: wavelength division multiplexing; Mach-Zehnder interferometers; optical fibre networks; optical modulation
Other keywords:
Subjects: Modulation and coding methods; Multiplexing and switching in optical communication; Optical fibre networks
References
-
-
1)
- Akiyama, S., Hirose, S., Watanabe, T., Ueda, M., Sekiguchi, S., Morii, N., Yamamoto, T., Kuramata, A., Soda, H.: `Novel InP-based Mach–Zehnder modulator for 40 Gb/s integrated lightwave source', ISLC'02, 2002, Garmisch-Partenkirchen, Germany, p. 57–58.
-
2)
- C. Rolland , R.S. Moore , F. Shepherd , G. Hillier . 10 Gbit/s 1.56 µm multiquantum well InP/InGaAsP Mach–Zehnder optical modulator. Electron. Lett. , 5 , 471 - 472
-
3)
- M.G. Young , U. Koren , B.I. Miller , M. Chien , T.L. Kondo , D.M. Tennant , K. Feder , K. Dreyer , G. Raybon . Six wavelength laser array with integrated amplifier and modulator. Electron. Lett. , 1835 - 1836
-
4)
- Sugiyama, M., Doi, M., Taniguchi, S., Nakazawa, T., Onaka, H.: `Driver-less 40 Gb/s LiNbO', OFC'02, May 2002, Pasadena, CA, USA, p. 853–856.
-
5)
- S. Oku , Y. Shibata , K. Ochiai . Controlled beam dry etching of InP using Br2–N2 gas. J. Electron. Mater. , 585 - 591
-
6)
- R. Spickermann , N. Dagli , M.G. Peters . GaAs/AlGaAs electro-optic modulator with bandwidth >40 GHz. Electron. Lett. , 11 , 915 - 916
-
7)
- A. Sano , Y. Miyamoto . Performance evaluation of prechirped RZ and CS-RZ formats in high-speed transmission systems with dispersion management. J. Lightwave Technol. , 12 , 1864 - 1871
-
8)
- Oohashi, H., Shibata, Y., Ishii, H., Kawaguchi, Y., Kondo, Y., Yoshikuni, Y., Tohmori, Y.: `46.9 nm wavelength-selectable arrayed DFB lasers with integrated MMI coupler and SOA', IPRM'01, May 2001, Nara, Japan, p. 575–578.
-
9)
- P.J. Corvini , J.E. Bowers . Model of trap filling and avalanche breakdown in semi-insulating Fe:InP. J. Appl. Phys. , 1 , 259 - 269
-
1)