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Experimental verification of barrier height temperature dependence in GaAs planar doped barrier diodes

Experimental verification of barrier height temperature dependence in GaAs planar doped barrier diodes

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The effect of temperature variation on barrier height of a GaAs planar doped barrier (PDB) diode has been investigated. Measurements show that the barrier height of such a device increases with increasing temperature, by the rate of 0.25 to 0.3 meV/K for the temperature range 200–360 K. Although it has been theoretically predicted (by Kearney, Dale and colleagues) that the PDB diode has a positive temperature coefficient, this is understood to be the first time that such prediction has been verified experimentally.

References

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      • M.J. Kearney , I. Dale . GaAs planar doped barrier diodes for mixer and detector applications. GEC J. Res. , 1 - 12
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      • M. Shur . Spill-over effects in planar doped barrier devices. Appl. Phys. Lett. , 869 - 871
    3. 3)
      • M.J. Kearney , M.J. Kelly , A. Condie , I. Dale . Temperature dependent barrier heights in bulk unipolar diodes leading to improved temperature stable performance. Electron. Lett. , 671 - 672
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      • R.J. Malik , T.R. Aucoin , R.L. Ross , K. Board , C.E.C. Wood , L.F. Eastman . Planar doped barrier diodes in GaAs by molecular bean epitaxy. Electron. Lett. , 836 - 837
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