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MBE growth of AlGaN/GaN HEMTs with high power density

MBE growth of AlGaN/GaN HEMTs with high power density

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RF-plasma MBE has been used for the growth of undoped Al0.25Ga0.75N/GaN HEMT structures on semi-insulating SiC substrates. Devices with a 1.5 µm gate length have an fT of 10 GHz and have demonstrated an output power density of 6.3 W/mm at 2 GHz. Details of the growth process and device results are presented.

Inspec keywords: power HEMT; wide band gap semiconductors; III-V semiconductors; gallium compounds; molecular beam epitaxial growth; aluminium compounds; semiconductor growth; UHF field effect transistors

Other keywords: MBE growth; 1.5 micron; AlGaN-GaN; AlGaN/GaN; HEMTs; SiC; power density; 10 GHz; RF-plasma MBE; 2 GHz; semi-insulating SiC substrates; gate length

Subjects: Vacuum deposition; II-VI and III-V semiconductors; Solid-state microwave circuits and devices; Power semiconductor devices; Other field effect devices

References

    1. 1)
      • Naniwae, K., Hartman, J., Petrich, C., Davis, R.F., Nemanich, R.J.: `Effect of interface manipulation for MBE growth of AlN on 6H-SiC', T5.6, 2000 Materials Research Society Mtg, November–December 2002, Boston, MA, USA.
    2. 2)
    3. 3)
      • D.F. Storm , D.S. Katzer , S.C. Binari , E.R Glaser , B.V. Shanabrook , J.A. Roussos . Reduction of buffer layer conduction near RF-MBE grown GaN/AlN interfaces by beryllium doping. Appl. Phys. Lett.
    4. 4)
      • Katzer, D.S., Storm, D.F., Binari, S.C., Roussos, J.A., Shanabrook, B.V., Glaser, E.R.: `Molecular beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs', WB2.5, 2002 Int. Conf. Molecular Beam Epitaxy, September 2002, San Francisco, CA, USA.
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