A new InGaAsP/InGaP/AlGaAs (λ = 810 nm) laser with tensile-strained InGaP barriers, broad waveguide structure and current blocking region near the facet is reported. 2 W continuous wave operation over 2000 h from a 50 µm aperture was achieved.
Inspec keywords: laser reliability; gallium compounds; MOCVD; optical fabrication; indium compounds; gallium arsenide; III-V semiconductors; waveguide lasers; aluminium compounds; laser beams; quantum well lasers
Other keywords:
Subjects: Laser beam characteristics and interactions; Optoelectronics manufacturing; Design of specific laser systems; Semiconductor lasers; Maintenance and reliability; Optical waveguides; Surface treatment and coating techniques; Laser beam interactions and properties; Optical waveguides and couplers; Engineering materials; Chemical vapour deposition; Lasing action in semiconductors; Optical fabrication, surface grinding; Reliability; Chemical vapour deposition
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