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Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

Monolithically integrated multi-wavelength laser by selective area growth with metal organic vapour phase epitaxy

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A multi-wavelength laser (MWL) is fabricated by means of selective area growth (SAG) with metal organic vapour phase epitaxy (MOVPE). The MWL consists of an array of amplifiers monolithically integrated with a transmissive (de-)multiplexer and, to the authors' knowledge, is the first device of this kind realised with only two growth steps making use of SAG MOVPE.

References

    1. 1)
      • Van Thourhout, D., De Merlier, J., Van Caenegem, T., Vanwassenhove, L., Moerman, I., Van Daele, P., Herben, C.G.P., Leijtens, X.J.M., van Uffelen, J.W.M., Smit, M.K., Baets, R.: `Elimination of crosstalk in the common output amplifier of a multi-wavelengthsource by gain clamping', ThV2, OFC '99, February 1999.
    2. 2)
      • T. Van Caenegem , I. Moerman , P. Demeester . Selective area growth on planar masked InP substrates by metal organicvapour phase epitaxy. Prog. Cryst. Growth Charact. Mater. , 263 - 288
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