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Ga2O3(Gd2O3) film as high-k gate dielectric for SiGe MOSFET devices

Ga2O3(Gd2O3) film as high-k gate dielectric for SiGe MOSFET devices

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  • Author(s): S. Pal 1 ; S.K. Ray 1 ; S. Lahiri 2 ; D.N. Bose 3
    • View affiliations
    • Affiliations: 1: Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur, India
      2: Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, India
      3: Advanced Technology Centre, Indian Institute of Technology, Kharagpur, India
  • Source: Volume 36, Issue 24, 23 November 2000, p. 2044 – 2046
    DOI:  10.1049/el:20001410 , Print ISSN 0013-5194, Online ISSN 1350-911X
© IEE
Published

Dielectric films from gadolinium gallium garnet single crystal were deposited by electron-beam evaporation on strained Si1-xGex/Si layers at 300 K to form high-k metal-insulator-semiconductor (MIS) structures. The p-Si0.74Ge0.26/Ga2O3(Gd2O3) interface properties were studied through C-V and G-V measurements of the MIS capacitors, which showed encouraging electrical characteristics with oxide k = 12.3 and minimum interface state density Dit of 4.8 × 1011 cm-2eV-1.

Inspec keywords: Ge-Si alloys; interface structure; gallium compounds; interface states; insulating thin films; gadolinium compounds; semiconductor-insulator boundaries; MOSFET

Other keywords: electrical characteristics; SiGe MOSFET devices; interface state density; Ga2O3; SiGe; Gd2O3; high-k gate dielectric

Subjects: Insulated gate field effect transistors; Metal-insulator-semiconductor structures

References

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