Simin, G.; Hu, X.; Ilinskaya, N.; Kumar, A.; Koudymov, A.; Zhang, J.; Asif Khan, M.; Gaska, R.; Shur, M.S.: '7.5 kW/mm<sup>2</sup> current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates', Electronics Letters, 2000, 36, (24), p. 2043-2044, DOI: 10.1049/el:20001401
IET Digital Library, https://digital-library.theiet.org/;jsessionid=ju0tflmugc1.x-iet-live-01content/journals/10.1049/el_20001401