RT Journal Article
A1 H. Ohta
A1 K. Kawamura
A1 M. Orita
A1 N. Sarukura
A1 M. Hirano
A1 H. Hosono

PB iet
T1 UV-emitting diode composed of transparent oxide semiconductors: p-SrCu2O2/n-ZnO
JN Electronics Letters
VO 36
IS 11
SP 984
OP 985
AB A UV-emitting diode composed of a hetero-SrCu2O2/ZnO pn junction was fabricated by pulsed laser deposition (PLD). On injecting an electrical current through a pn heterojunction of p-SrCu2O2/n-ZnO, an emission peak centred at 387 nm was observed, originating from excitons or the electron hole plasma in ZnO.
K1 transparent oxide semiconductor
K1 p-n heterojunction
K1 pulsed laser deposition
K1 387 nm
K1 SrCu2O2-ZnO
K1 UV-emitting diode
K1 electron-hole plasma
K1 exciton
K1 current injection
DO https://doi.org/10.1049/el:20000726
UL https://digital-library.theiet.org/;jsessionid=18ppr06bpok7f.x-iet-live-01content/journals/10.1049/el_20000726
LA English
SN 0013-5194
YR 2000
OL EN