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Very low threshold current density operation of 1.5 µm DFB lasers with wire-like active regions

Very low threshold current density operation of 1.5 µm DFB lasers with wire-like active regions

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Published

Very low threshold 1.5 µm-wavelength GaInAsP/InP distributed feedback lasers consisting of deeply etched double quantum-well wire-like active regions have been successfully realised by CH4/H2 reactive ion etching and metal organic vapour phase epitaxial regrowth. A threshold current density Jth of as low as 94 A/cm2 was achieved for an active region width of 115 nm and cavity length of 600 µm.

Inspec keywords: distributed feedback lasers; vapour phase epitaxial growth; indium compounds; sputter etching; gallium arsenide; quantum well lasers; III-V semiconductors

Other keywords: double quantum well wire-like active region; 1.5 micron; threshold current density; GaInAsP-InP; metal organic vapour phase epitaxial regrowth; CH4/H2 reactive ion etching; GaInAsP/InP distributed feedback laser

Subjects: Semiconductor lasers; Lasing action in semiconductors

References

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