6 µm vertical cavity surface emitting laser based on IV-VI semiconductor compounds
6 µm vertical cavity surface emitting laser based on IV-VI semiconductor compounds
- Author(s): T. Schwarzl ; W. Heiß ; G. Springholz ; M. Aigle ; H. Pascher
- DOI: 10.1049/el:20000260
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- Author(s): T. Schwarzl 1 ; W. Heiß 1 ; G. Springholz 1 ; M. Aigle 2 ; H. Pascher 2
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View affiliations
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Affiliations:
1: Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität Linz, Linz, Austria
2: Experimentalphysik I, Universität Bayreuth, Bayreuth, Germany
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Affiliations:
1: Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität Linz, Linz, Austria
- Source:
Volume 36, Issue 4,
17 February 2000,
p.
322 – 324
DOI: 10.1049/el:20000260 , Print ISSN 0013-5194, Online ISSN 1350-911X
An optically-pumped lead salt-based vertical cavity surface emitting laser is presented. The laser structure grown by molecular-beam epitaxy consists of a Pb0.99Eu0.01Te/PbTe λ/2 microcavity with Pb0.99Eu0.01Te/Pb0.94Eu0.06Te Bragg mirrors. Stimulated emission was observed at 6073 nm below 25 K.
Inspec keywords: laser beams; europium compounds; molecular beam epitaxial growth; semiconductor lasers; lead compounds; microcavity lasers; optical pumping; surface emitting lasers; laser mirrors; IV-VI semiconductors; optical fabrication; stimulated emission
Other keywords:
Subjects: Laser accessories and instrumentation; Vacuum deposition; Vacuum deposition; Optical lenses and mirrors; Laser beam characteristics and interactions; Laser beam interactions and properties; Optical fabrication, surface grinding; Design of specific laser systems; Laser resonators and cavities; Laser resonators and cavities; Semiconductor lasers; Lasing action in semiconductors
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