GaAs/AlGaAs quantum well intermixing using buried Al-oxide layer

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GaAs/AlGaAs quantum well intermixing using buried Al-oxide layer

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Using buried wet-oxidised AlxOy layers to enhance impurity free vacancy diffusion, the intermixing of GaAs/AlGaAs quantum wells has been achieved. A 70 Å thick GaAs quantum well shows a blueshift of 59 meV when the sample is annealed at 950°C for 120 s. By cathodeluminescence measurements, it is confirmed that the bandgap transition region is localised laterally within 1 µm of the oxide/nonoxide interface.

Inspec keywords: semiconductor quantum wells; aluminium compounds; annealing; vacancies (crystal); cathodoluminescence; III-V semiconductors; chemical interdiffusion; gallium arsenide

Other keywords: oxide/nonoxide interface; 120 s; impurity free vacancy diffusion; 950 degC; quantum well intermixing; 70 angstrom; buried wet-oxidised layers; bandgap transition region; blueshift; GaAs-AlGaAs; annealing; cathodoluminescence measurements; III-V semiconductors

Subjects: Semiconductor superlattices, quantum wells and related structures; Interstitials and vacancies; Optical properties of II-VI and III-V semiconductors (thin films, low-dimensional and nanoscale structures); Electron states in low-dimensional structures; Annealing processes; Chemical interdiffusion in solids; Luminescent materials; Cathodoluminescence, ionoluminescence (condensed matter); Annealing processes in semiconductor technology

References

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