High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process

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High temperature performance of recessed gate GaN MESFETs fabricated using photoelectrochemical etching process

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Recessed gate GaN MESFETs have been fabricated by employing a new photoelectrochemical etching method which utilises a photoresistive mask and KOH based etchant. The etching rate of the etchant with 1.0 mol% of KOH for n-GaN is as high as 1600 Å/min at an Hg illumination intensity of 35 mW/cm2. The fabricated GaN MESFET exhibits current saturation at Vds = 4 V and pinch-off at Vgs = –3 V with a peak drain current of ~240 mA/mm at 300 K. The DC performance of the device does not change considerably with temperature in the range 300 – 473 K.

Inspec keywords: etching; III-V semiconductors; high-temperature electronics; wide band gap semiconductors; leakage currents; Schottky gate field effect transistors; gallium compounds

Other keywords: Hg illumination intensity; DC performance; recessed gate GaN MESFETs; 4 V; photoelectrochemical etching process; 300 to 473 K; Hg; GaN; -3 V; high temperature performance; n-type GaN; KOH based etchant; KOH; photoresistive mask

Subjects: Other field effect devices; Surface treatment (semiconductor technology)

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