Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers
Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers
- Author(s): Xiaodong Huang ; A. Stintz ; C.P. Hains ; G.T. Liu ; J. Cheng ; K.J. Malloy
- DOI: 10.1049/el:20000124
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- Author(s): Xiaodong Huang 1 ; A. Stintz 1 ; C.P. Hains 1 ; G.T. Liu 1 ; J. Cheng 1 ; K.J. Malloy 1
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Affiliations:
1: Center for High Technology Materials, University of New Mexico, Albuquerque, USA
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Affiliations:
1: Center for High Technology Materials, University of New Mexico, Albuquerque, USA
- Source:
Volume 36, Issue 1,
6 January 2000,
p.
41 – 42
DOI: 10.1049/el:20000124 , Print ISSN 0013-5194, Online ISSN 1350-911X
Efficient, continuous-wave lasing operation of narrow-stripe, oxide-confined, long-wavelength InAs quantum dot lasers in the ground state (λ ≃ 1.28 µm) has been achieved at temperatures up to 100°C. The lasers have a very low threshold current density (Jth = 24 A/cm2), high differential quantum efficiency (55%), and very low internal loss (αi = 0.77 cm-1).
Inspec keywords: optical fabrication; semiconductor quantum dots; indium compounds; laser variables measurement; current density; optical losses; quantum well lasers; laser beams; ground states; molecular beam epitaxial growth; III-V semiconductors
Other keywords:
Subjects: Vacuum deposition; Semiconductor lasers; Design of specific laser systems; Vacuum deposition; Lasing action in semiconductors; Optical fabrication, surface grinding; Optical variables measurement; Laser beam characteristics and interactions; Laser beam interactions and properties
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