High-power mid-IR type II quantum-well lasers grown on compliant universal substrate

C.H. Kuo; Chih-HsiangLin; C.H. Thang; S.S. Pei; Y.C. Zhou

High-power mid-IR type II quantum-well lasers grown on compliant universal substrate

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High-power mid-IR type II quantum-well lasers grown on compliant universal substrate

Author(s): C.H. Kuo ; Chih-HsiangLin ; C.H. Thang ; S.S. Pei ; Y.C. Zhou
DOI: 10.1049/el:19990966

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Author(s): C.H. Kuo ¹ ; Chih-HsiangLin ¹ ; C.H. Thang ² ; S.S. Pei ² ; Y.C. Zhou ³
- Affiliations: 1: Applied Optoelectronics Inc., Sugar Land, USA
  2: Space Vacuum Epitaxy Center and ECE Department, University of Houston, Houston, USA
  3: School of Electrical Engineering, Cornell University, Ithaca, USA
Source: Volume 35, Issue 17, 19 August 1999, p. 1468 – 1469
DOI: 10.1049/el:19990966 , Print ISSN 0013-5194, Online ISSN 1350-911X

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High-power mid-infra-red type II quantum-well lasers directly grown on compliant universal substrate with a lasing wavelength of 3.9 µm at 80 K have been realised. A peak output power of > 320 mW per facet and differential quantum efficiency (DQE) of 7.2% are observed.

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High-power mid-IR type II quantum-well lasers grown on compliant universal substrate

High-power mid-IR type II quantum-well lasers grown on compliant universal substrate

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