Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies

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© IEE
Published 29/07/2012

Abstract

It is shown that the discrepancy between the measured microwave power performance of GaN MODFETs and the prediction based on the DC characteristics is caused by the trapping of mobile electrons in the channel under large-signal modulation. This phenomenon manifests itself in the compression of the drain current. The strong dependence of the level of current compression on the gate bias voltage indicates that carrier trapping take place in the AlGaN barrier or at the surface of the device.

Inspec keywords: power HEMT; microwave power transistors; electric current; modulation; microwave field effect transistors; III-V semiconductors; gallium compounds; electron traps

Other keywords: GaN; mobile electrons; device surface; 60 V; AlGaN; DC characteristics; drain current compression; AlGaN barrier; carrier trapping; microwave power performance; microwave frequencies; gate bias voltage; large-signal modulation; GaN MODFETs

Subjects: Other field effect devices; Power semiconductor devices; Solid-state microwave circuits and devices

References

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      • Wu, Y.-F.: `3-watt AlGaN/GaN HEMTs on sapphire substrates with thermal managementby flip-chip bonding', 56th Annual Device Research Conf., 1998, University of Virginia at Charlottesville, VA, USA
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      • Wu, Y.-F.: `High speed and high power AlGaN/GaN MODFETs', 55th Annual Device Research Conf., 1997, Ft. Collins, CO, USA
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