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Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant

Low threshold InGaAsN/GaAs single quantum well lasers grown by molecular beam epitaxy using Sb surfactant

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Long wavelength InGaAsN/GaAs single quantum well (SQW) laser diodes have been grown by solid source molecular beam epitaxy (MBE) using Sb as a surfactant. A record low threshold current density of 1.47 kA/cm2 and a quantum efficiency of 0.11 W/A are reported for broad area laser diodes (LDs) operating at a wavelength of 1.275 µm under pulsed operation at room temperature.

References

    1. 1)
      • M. Kondow , K. Uomi , A. Niwa , T. Kitatani , S. Watahiki , Y. Yazawa . GaInNAs: A novel material for long-wavelength-range laser diodes withexcellent high-temperature performance. Jpn. J. Appl. Phys. , 1273 - 1275
    2. 2)
      • H.P. Xin , C.W. Tu . GaInNAs/GaAs multiple quantum wells grown by gas-source molecular beamepitaxy. Appl. Phys. Lett. , 2442 - 2444
    3. 3)
      • X. Yang , J.B. Heroux , M.J. Jurkovic , W.I. Wang . Photoluminescence of As-grown and thermally annealed InGaAsN/GaAs quantumwells grown by molecular beam epitaxy. to be published in J. Vac. Sci. Tech. B
    4. 4)
      • S. Sato , Y. Osawa , T. Saitoh . Room-temperature operation of GaInNAs/GaInPdouble-heterostructure laser diodes grown by metalorganic chemical vapordeposition. Jpn. J. Appl. Phys. , 2671 - 2675
    5. 5)
      • S. Sato , S. Satoh . Room-temperature pulsed operation of strained GaInNAs/GaAs double quantumwell laser diode grown by metal organic chemical vapour deposition. Electron. Lett. , 1495 - 1497
    6. 6)
      • Z. Pan , T. Miyamoto , D. Schlenker , S. Sato , F. Koyama , K. Iga . Low temperature growth of GaInNAs/GaAs quantum wells by metalorganicchemical vapor deposition using tertiarybutylarsine. J. Appl. Phys. Lett. , 6409 - 6411
    7. 7)
      • T. Kitatani , M. Kondow , S. Nakatsuka , Y. Yazawa , M. Okai . Room-temperature lasing operation of GaInNAs-GaAs single quantum-welllaser diodes. IEEE J. Sel. Topics Quantum Electron. , 206 - 209
    8. 8)
      • S. Sato , Y. Osawa , T. Saitoh , I. Fujimura . Room-temperature pulsed operation of 1.3-µm GaInNAs/GaAs laserdiode. Electron. Lett. , 1386 - 1387
    9. 9)
      • K. Nakahara , M. Kondow , T. Kitatani , M. Larson , K. Uomi . 1.3-µm continuous-wave lasing operation in GaInNAs quantum-welllasers. IEEE Photonics Technol. Lett. , 487 - 488
    10. 10)
      • M. Copel , M.C. Reuter , E. Kaxiras , R.M. Tromp . Surfactants in epitaxial growth. Phys. Rev. Lett. , 632 - 635
    11. 11)
      • N. Grandjean , J. Massies , V.H. Etgens . Delayed relaxation by surfactant action in highly strained III-V semiconductorepitaxial layer. Phys. Rev. Lett. , 796 - 799
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