1.5 µm InGaAlAs-strained MQW ridge-waveguide laser diodes with hot-carrier injection suppression structure

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1.5 µm InGaAlAs-strained MQW ridge-waveguide laser diodes with hot-carrier injection suppression structure

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The authors have developed a ridge-waveguide laser diode (LD) with a layer structure which suppresses hot-carrier injection into separate confinement heterostructure layers as well as effectively confining carriers in the multiquantum well layers. Fabricated LDs show low threshold currents and improved temperature characteristics due to a decrease in the leakage current outside the ridge-waveguide caused by reduced carrier diffusion length.

Inspec keywords: indium compounds; III-V semiconductors; hot carriers; aluminium compounds; gallium arsenide; ridge waveguides; quantum well lasers; waveguide lasers

Other keywords: separate confinement heterostructure layer; carrier confinement; InGaAlAs; carrier diffusion length; InGaAlAs strained MQW ridge waveguide laser diode; temperature characteristics; 1.5 micron; hot carrier injection suppression; multiquantum well; threshold current; leakage current

Subjects: Semiconductor lasers; Lasing action in semiconductors

References

    1. 1)
      • Y. Kawamura , H. Iwamura . InGaAsP/InAlAs type I/type II multiple quantum well structures grown by gas source molecular beam epitaxy. J. Crystal Growth , 597 - 601
    2. 2)
      • S.Y. Hu , S.W. Corzine , K.-K. Law , D.B. Young , A.C. Gossard , L.A. Coldren , J.L. Merz . Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers. J. Appl. Phys. , 4479 - 4487
    3. 3)
      • Evans, J.D., Letal, G.J., Li, G.P., Simmons, J.G.: `The contribution of lateral current spreading to the temperature sensitivity of strained-layer, multi-quantum-well, long wavelength, ridge waveguide lasers', Proc. LEOS'95, 1995, 1, p. 278–279.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19990074
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