1.5 µm InGaAlAs-strained MQW ridge-waveguide laser diodes with hot-carrier injection suppression structure
The authors have developed a ridge-waveguide laser diode (LD) with a layer structure which suppresses hot-carrier injection into separate confinement heterostructure layers as well as effectively confining carriers in the multiquantum well layers. Fabricated LDs show low threshold currents and improved temperature characteristics due to a decrease in the leakage current outside the ridge-waveguide caused by reduced carrier diffusion length.
