Large-signal compression-current measurements in high-power microwave pin photodiodes
Large-signal compression-current measurements in high-power microwave pin photodiodes
- Author(s): K.J. Williams and R.D. Esman
- DOI: 10.1049/el:19990057
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- Author(s): K.J. Williams 1 and R.D. Esman 1
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View affiliations
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Affiliations:
1: Code 5650, Naval Research Laboratory, Washington, USA
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Affiliations:
1: Code 5650, Naval Research Laboratory, Washington, USA
- Source:
Volume 35, Issue 1,
7 January 1999,
p.
82 – 84
DOI: 10.1049/el:19990057 , Print ISSN 0013-5194, Online ISSN 1350-911X
The authors present the first large-signal compression measurements for surface-illuminated pin microwave photodetectors. The maximum RF power delivered by the photodiodes was +12, +17 and +20 dBm for bandwidths of 25, 3 and 1 GHz, respectively.
Inspec keywords: semiconductor device measurement; photodetectors; power semiconductor diodes; microwave diodes; microwave photonics; electric current measurement; p-i-n photodiodes
Other keywords:
Subjects: Current measurement; Solid-state microwave circuits and devices; Microwave photonics; Photoelectric devices; Photodetectors
References
-
-
1)
- K.J. Williams , R.D. Esman . Photodiode DC and microwave nonlinearity at high currents due to carrierrecombination nonlinearities. IEEE Photonics Technol. Lett. , 7 , 1015 - 1017
-
2)
- J. Paslaski . High-power microwave photodiode for improving performance of RF fiberoptic links. Proc. SPIE-Photonics Radio Freq. , 110 - 119
-
3)
- G.A. Davis . A 920–1650 nm high-current photodetector. IEEE Photonics Technol. Lett. , 1373 - 1375
-
4)
- K.J. Williams , R.D. Esman , M. Dagenais . Effects of high space-charge fields on the response of microwave photodetectors. IEEE Photonics Technol. Lett. , 5 , 639 - 641
-
5)
- K.J. Williams . Differences in p-side and n-side illuminated pinphotodiode nonlinearities. IEEE Photonics Technol. Lett. , 1 , 132 - 135
-
6)
- S. Jasmin . Diluted- and distributed-absorption microwave waveguide photodiodes forhigh efficiency and high power. IEEE Trans. , 8 , 1337 - 1341
-
7)
- C.L. Goldsmith . Principles and performance of traveling-wave photodetector arrays. IEEE Trans. , 8 , 1342 - 1350
-
8)
- K.S. Giboney . Traveling-wave photodetector design and measurements. IEEE J. Sel. Top. Quantum Electron. , 3 , 622 - 629
-
9)
- N. Shimizu , M. Watanabe , T. Furuta , T. Ishibashi . InP-InGaAs uni-traveling-carrier photodiode with improved 3-dB bandwidthof over 150 GHz. IEEE Photonics Technol. Lett. , 3 , 412 - 414
-
10)
- A.R. Williams , K.L. Kellner , P.K.L. Yu . High frequency saturation measurements of an InGaAs/InP waveguide photodetector. Electron. Lett. , 14 , 1298 - 1299
-
11)
- L.Y. Lin . High-power high-speed photodetectors—design, analysis and experimentaldemonstration. IEEE Trans. , 8 , 1320 - 1331
-
12)
- P. Hill , J. Schlafer , W. Powazinik , M. Urban , E. Eichen , R. Olshansky . Measurement of hole velocity in n-type InGaAs. Appl. Phys. Lett.
-
1)