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The data transmission characteristics of polarisation-controlled 850 nm GaAs-based VCSELs grown on (311)B substrates are investigated and compared with those of VCSELs on (100) substrates. Large differences in the dependence of the BER on bias current and the power penalty between polarisation resolved and unresolved systems are observed in VCSELs on (311)B and (100) substrates. The beneficial effect of the polarisation stability of VCSELs on (311)B substrates is clearly demonstrated.
Inspec keywords: gallium arsenide; light polarisation; III-V semiconductors; surface emitting lasers; laser frequency stability; optical transmitters; semiconductor lasers
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Subjects: Optical communication devices, equipment and systems; Optical communication equipment; Laser resonators and cavities; Lasing action in semiconductors; Semiconductor lasers; Laser resonators and cavities; Design of specific laser systems