The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 µm diameter device, the threshold current is 6 mA and the input threshold power is 21 mW. The maximum operating temperature is 17 and 101°C for CW and pulsed conditions, respectively.
Inspec keywords: quantum well lasers; gallium arsenide; laser mirrors; indium compounds; laser cavity resonators; III-V semiconductors
Other keywords:
Subjects: Laser resonators and cavities; Laser resonators and cavities; Optical lenses and mirrors; Lasing action in semiconductors; Semiconductor lasers; Laser accessories and instrumentation
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