Near room-temperature continuous-wave operation of electrically pumped 1.55 µm vertical cavity lasers with InGaAsP/InP bottom mirror
Near room-temperature continuous-wave operation of electrically pumped 1.55 µm vertical cavity lasers with InGaAsP/InP bottom mirror
- Author(s): S. Rapp ; F. Salomonsson ; J. Bentell ; I. Sagnes ; H. Moussa ; C. Mériadec ; R. Raj ; K. Streubel ; M. Hammar
- DOI: 10.1049/el:19990014
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- Author(s): S. Rapp 1 ; F. Salomonsson 1 ; J. Bentell 1 ; I. Sagnes 2 ; H. Moussa 2 ; C. Mériadec 2 ; R. Raj 2 ; K. Streubel 3 ; M. Hammar 1
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View affiliations
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Affiliations:
1: Department of Electronics, Laboratory of Semiconductor Materials, Royal Institute of Technology, Kista, Sweden
2: Department of Electronics, Laboratory of Semiconductor Materials, France Telecom/CNET/DTD/CDP, Bagneux, France
3: Department of Electronics, Laboratory of Semiconductor Materials, Mitel Semiconductor AB, Järfälla, Sweden
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Affiliations:
1: Department of Electronics, Laboratory of Semiconductor Materials, Royal Institute of Technology, Kista, Sweden
- Source:
Volume 35, Issue 1,
7 January 1999,
p.
49 – 50
DOI: 10.1049/el:19990014 , Print ISSN 0013-5194, Online ISSN 1350-911X
The first near room-temperature continuous-wave (CW) operation of a vertical cavity laser based on an epitaxial InGaAsP/InP bottom mirror is reported. The structure employs a package of nine strain compensated GaInAsP quantum wells and a wafer-fused GaAs/AlGaAs top mirror. For a 10 µm diameter device, the threshold current is 6 mA and the input threshold power is 21 mW. The maximum operating temperature is 17 and 101°C for CW and pulsed conditions, respectively.
Inspec keywords: quantum well lasers; gallium arsenide; laser mirrors; indium compounds; laser cavity resonators; III-V semiconductors
Other keywords:
Subjects: Laser resonators and cavities; Laser resonators and cavities; Optical lenses and mirrors; Lasing action in semiconductors; Semiconductor lasers; Laser accessories and instrumentation
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