Low current and highly reliable operation at 80°C of 650 nm 5 mW LDs for DVD applications

Access Full Text

Low current and highly reliable operation at 80°C of 650 nm 5 mW LDs for DVD applications

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

Low current, highly reliable operation at 80°C has been achieved for 650 nm band AlGaInP laser diodes (LDs) with a strained multiquantum well active layer on a (115)A substrate for the first time. The operation current was as low as 60 mA and the lifetime was 92 kh at 80°C, 5 mW. It was also shown that the operation current density is a dominant factor in determining the lifetime.

Inspec keywords: video discs; laser reliability; aluminium compounds; gallium compounds; quantum well lasers; III-V semiconductors

Other keywords: operation current density; 650 nm; laser diodes; AlGaInP; DVD applications; lifetime; 5 mW; strained multiquantum well active layer; 92000 h; 60 mA; 80 degC; operation current

Subjects: Audio and video equipment manufacturing; Optoelectronics manufacturing; Semiconductor lasers; Reliability; Maintenance and reliability; Video recording

References

    1. 1)
      • M. Ohya , H. Fujii , K. Doi , J. Okuda , K. Anjim , K. Endo . Highly reliable operation at 80°C for 650 nm 5 mW AlGaInP LDs. Electron. Lett. , 1636 - 1638
    2. 2)
      • H. Fujii , J. Okuda , K. Endo , H. Yoshii , T. Kishi , H. Makita , H. Yamada . Low-threshold-current 670 nm multiquantum-well laser diodes. Electron. Lett. , 2140 - 2142
    3. 3)
      • Y. Ueno , H. Fujii , H. Sawano , K. Kobayashi , K. Hara , A. Gomyo , K. Endo . 30 mW 690 nm high-power strained-quantum-well AlGaInP laser. IEEE J. Quantum Electron. , 1851 - 1856
    4. 4)
      • R. Kobayashi , H. Hotta , F. Miyasaka , K. Hara , K. Kobayashi . Real index-guided AlGaInP visible laser with high-bandgap energy AlInPcurrent blocking layer grown by HCl-assisted metalorganic vapor phase epitaxy. IEEE J. Quantum Electron. , 723 - 727
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19990011
Loading

Related content

content/journals/10.1049/el_19990011
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading