Lumped DC–50 GHz amplifier using InP/InGaAs HBTs

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Lumped DC–50 GHz amplifier using InP/InGaAs HBTs

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A direct-coupled, lumped broadband amplifier utilising InP/InGaAs single heterojunction bipolar transistors (SHBTs) is presented. The achieved –3 dB bandwidth is 50 GHz with a DC gain of 9.8 dB and a gain peak of only 1.2 dB. This is the largest bandwidth reported for InP/InGaAs HBT amplifiers with such a flat gain curve.

Inspec keywords: indium compounds; wideband amplifiers; gallium arsenide; III-V semiconductors; heterojunction bipolar transistors; feedback amplifiers; bipolar transistor circuits; DC amplifiers

Other keywords: DC gain; InP/InGaAs single heterojunction bipolar transistor; 50 GHz; bandwidth; 9.8 dB; direct coupled lumped broadband amplifier; InP-InGaAs

Subjects: Amplifiers; Bipolar transistors

References

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