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Effect of element width on above-threshold behaviour of antiguided diode laser arrays

Effect of element width on above-threshold behaviour of antiguided diode laser arrays

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The authors analyse the effect of element width on the modal behaviour of resonant antiguided diode laser arrays at high drive levels above threshold. Intra-element gain spatial hole burning causes modes adjacent to the resonant (in-phase) mode to eventually reach threshold, the onset of which is hastened as element widths get larger than the carrier diffusion length; this is in excellent agreement with experimental observations.

References

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      • H. Yang , L.J. Mawst , M. Nesnidal , J. Lopez , A. Bhattacharya , D. Botez . 10 W near-diffraction-limited peak-power from Al-free 0.98 µm-emittingphase-lockedantiguided arrays. Electron. Lett. , 2 , 136 - 137
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      • Bhattacharya, A.: `High-power, near resonant, 1.55 µm emitting antiguided diode laserarrays', 1997, PhD, University of Wisconsin-Madison.
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