860 GHz rate asymmetric colliding pulse modelocked diode lasers
860 GHz rate asymmetric colliding pulse modelocked diode lasers
- Author(s): T. Shimizu ; I. Ogura ; H. Yokoyama
- DOI: 10.1049/el:19971266
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- Author(s): T. Shimizu 1 ; I. Ogura 1 ; H. Yokoyama 1
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View affiliations
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Affiliations:
1: Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba, Japan
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Affiliations:
1: Opto-Electronics Research Laboratories, NEC Corporation, Tsukuba, Japan
- Source:
Volume 33, Issue 22,
23 October 1997,
p.
1868 – 1869
DOI: 10.1049/el:19971266 , Print ISSN 0013-5194, Online ISSN 1350-911X
The repetition frequency of modelocked laser diodes was increased to 860 GHz. This modelocking frequency was controlled simply by adjusting the position of a single saturable absorber in the asymmetric colliding pulse device geometry.
Inspec keywords: laser mode locking; optical saturable absorption; semiconductor lasers
Other keywords:
Subjects: Laser beam modulation, pulsing and switching; mode locking and tuning; Lasing action in semiconductors; Semiconductor lasers
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