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Tunable resonant cavity enhanced photodetectors with GaInAsSb/AlGaAsSb multiple quantum well structure grown by molecular beam epitaxy

Tunable resonant cavity enhanced photodetectors with GaInAsSb/AlGaAsSb multiple quantum well structure grown by molecular beam epitaxy

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  • Author(s): YanShi 1 ; Jian H.Zhao 1 ; JitenSarathy 2 ; G.H. Olsen 2 ; HaoLee 3
    • View affiliations
    • Affiliations: 1: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, USA
      2: Department of Electrical and Computer Engineering, Sensors Unlimited, Inc., Princeton, USA
      3: Department of Electrical and Computer Engineering, David Sarnoff Research Center, Princeton, USA
  • Source: Volume 33, Issue 17, 14 August 1997, p. 1498 – 1499
    DOI:  10.1049/el:19970976 , Print ISSN 0013-5194, Online ISSN 1350-911X
© IEE
Published

Tunable resonant cavity enhanced photodetectors based on a GaInAsSb/AlGaAsSb multiple quantum well structure grown by molecular beam epitaxy have been successfiilly demonstrated. A tuning range of 20 nm is realised at 110 K with a reverse bias voltage of 8 V, and the quantum efficiency is enhanced by the cavity to reach 20%, compared to ~1% for a non-resonant photodetector of similar structure.

Inspec keywords: gallium compounds; molecular beam epitaxial growth; III-V semiconductors; cavity resonators; indium compounds; tuning; gallium arsenide; semiconductor quantum wells; photodetectors; aluminium compounds

Other keywords: resonant cavity enhanced photodetectors; multiple quantum well structure; tunable photodetectors; 110 K; GaInAsSb-AlGaAsSb; MBE; MQW structure; 8 V; 20 percent; molecular beam epitaxy

Subjects: Semiconductor superlattices, quantum wells and related structures; Epitaxial growth; Photodetectors; Photoelectric devices

References

    1. 1)
      • K. Lai , J.C. Campell . Design of a tunable GaAs/AlGaAs multiple-quantum-wellresonant-cavity photodetector. IEEE J Quantum Electron. , 108 - 114
    2. 2)
      • K. Xie , J.H. Zhao , Y. Shi , H. Lee , G. Olsen . Resonant cavityenhanced GaInasSb-AlAsSb photodetector grown by MBE for mid-IRapplications. IEEE Photonics Technol. Lett. , 667 - 669
    3. 3)
      • Y. Shi , J.H. Zhao , J. Sarathy , G. Olsen , H. Lee . Quantumconfined Stark effect in GaInAsSb/AlGaAsSb quantum wells grown bymolecular beam epitaxy. Electron. Lett. , 248 - 250
    4. 4)
      • Y. Shi , J.H. Zhao , H. Lee , J. Sarathy , M. Cohen , G. Olsen . Resonant cavity enhanced GaInAsSb photodetectors grown by MBE for roomtemperature operations at 2.35 µm. Electron. Lett. , 2268 - 2269
    5. 5)
      • S. Adachi . Band gaps and refractive indices of AlGaAsSb, GalnAsSb, andInPAsSb: Key properties for a variety of the 2–4 µm optoelectronic deviceapplications. J. Appl. Phys. , 10 , 4869 - 4876
    6. 6)
      • Y. Shi , J.H. Zhao , J. Sarathy , H. Lee , G. Olsen . Tunablephotodetectors based on strain compensated GaInAsSb/AlGaAsSb multiplequantum wells grown by molecular beam epitaxy.
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