57% wallplug efficiency oxide-confined 850 nm wavelength GaAs VCSELs
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- Author(s): R. Jäger 1 ; M. Grabherr 1 ; C. Jung 1 ; R. Michalzik 1 ; G. Reiner 1 ; B. Weigl 1 ; K.J. Ebeling 1
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View affiliations
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Affiliations:
1:
Department of Optoelectronics,
University of Ulm
, Ulm
, Germany
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Affiliations:
1:
Department of Optoelectronics,
University of Ulm
, Ulm
, Germany
- Source: Electronics Letters, Volume 33, Issue 4, 13 February 1997, p. 330 – 331, DOI: 10.1049/el:19970193, Print ISSN 0013-5194, Online ISSN 1350-911X
Abstract
Vertical-cavity surface-emitting lasers with reduced effective index guiding of the optical wave show a record performance. GaAs based 850 nm emission wavelength VCSELs are fabricated using solid source MBE and carbon p-type doping. Depending on device design maximum room temperature conversion efficiencies of 57%, an operating range from –80°C up to +185°C, and threshold currents below 500 µA from –40 to +80°C have been obtained.
Inspec keywords: molecular beam epitaxial growth; optical fabrication; gallium arsenide; quantum well lasers; laser cavity resonators; III-V semiconductors; surface emitting lasers
Other keywords: wallplug efficiency; AlGaAs:C; -80 to 185 C; vertical-cavity SEL; 500 muA; oxide-confined laser; 57 percent; surface-emitting lasers; 850 nm; C p-type doping; GaAs; solid source MBE; VCSEL; conversion efficiencies
Subjects: Laser resonators and cavities; Design of specific laser systems; Lasing action in semiconductors; Optical fabrication, surface grinding; Semiconductor lasers; Epitaxial growth; Laser resonators and cavities
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