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Low threshold MBE-grown AlInGaAs/AlGaAs strained multiquantum-well lasers by rapid thermal annealing

Low threshold MBE-grown AlInGaAs/AlGaAs strained multiquantum-well lasers by rapid thermal annealing

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With post-growth rapid thermal annealing (RTA), 824 nm strained Al0.15In0.25Ga0.6As multiquantum-well (MQW) lasers grown by solid source molecular beam epitaxy (MBE) showed a record low threshold current density of 83 A/cm2 per well. Ridge waveguide lasers fabricated from the same material exhibited pulsed threshold current of 5 mA and 62% external quantum efficiency without facet coating. In addition, 1.4 K photoluminescence (PL) study suggests that RTA is very effective in removing nonradiative centres in the active region.

Inspec keywords: ridge waveguides; laser transitions; molecular beam epitaxial growth; current density; aluminium compounds; waveguide lasers; rapid thermal annealing; quantum well lasers; indium compounds; III-V semiconductors; gallium arsenide; photoluminescence

Other keywords: molecular beam epitaxy; solid source MBE; photoluminescence study; low threshold MBE-grown lasers; 5 mA; ridge waveguide lasers; threshold current density; 824 nm; 62 percent; strained MQW lasers; multiquantum-well lasers; PL study; post-growth RTA; rapid thermal annealing; Al0.15In0.25Ga0.6As-AlGaAs

Subjects: Semiconductor lasers; Annealing processes; Design of specific laser systems; Annealing processes in semiconductor technology; Photoluminescence in tetrahedrally bonded nonmetals; Lasing action in semiconductors; Vacuum deposition; Epitaxial growth

References

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