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20 GHz bandwidth monolithic optoelectronic receiver based on SSMBE-grown InP HBT technology

20 GHz bandwidth monolithic optoelectronic receiver based on SSMBE-grown InP HBT technology

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A monolithic optoelectronic receiver with a bandwidth of more than 20 GHz and a transimpedance of 300 Ω has been designed and fabricated in InP HBT technology. The results demonstrate the possibility of producing a compact component with a single power supply voltage for conversion of modulated light into electric signals with a bandwidth that may be large enough for 40 Gbit/s transmission.

Inspec keywords: molecular beam epitaxial growth; optical receivers; integrated optoelectronics; heterojunction bipolar transistors; indium compounds; bipolar analogue integrated circuits; photodetectors; III-V semiconductors

Other keywords: InP HBT technology; 40 Gbit/s; single power supply voltage; SSMBE-grown InP; InP; 20 GHz; MBE; compact component; monolithic optoelectronic receiver

Subjects: Integrated optoelectronics; Bipolar integrated circuits; Optical communication; Epitaxial growth

References

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      • Kjebon, O., Schatz, R., Lourdudoss, S., Nilsson, S., Stalnacke, B.: `Modulation response meaurements and evaluation of MQW InGaAsP lasersof various designs', High-Speed Semicondcutor Laser Sources, 1996, 2684, p. 138–152.
    2. 2)
      • B. Willén , M. Mokhtari , U. Westergren . New planarisation process for low current, high speed InP/InGaAs heterojunctionbipolar transistors. Electron. Lett. , 266 - 267
    3. 3)
      • S. Chandrasekhar , A.G. Dentai , C.H. Joyner , B.C. Johnson , A.H. Gnauck , G.J. Qua . 4 Gbit/s pin/HBT monolithic photoreceiver. Electron. Lett. , 1880 - 1882
    4. 4)
      • Toivonen, M., Salokatve, A., Tappura, K., Jalonen, M., Savolainen, P., Näppi, J., Pessa, M., Asonen, H.: `Solid source MBE for phosphide-based devices', 8th Int. Conf. on Indium Phosphide and Related Materials, 1996, p. 79–82.
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19961163
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