Your browser does not support JavaScript!
http://iet.metastore.ingenta.com
1887

Scanning tunnelling optoelectronic microscope with 2 ps time resolution

Scanning tunnelling optoelectronic microscope with 2 ps time resolution

For access to this article, please select a purchase option:

Buy article PDF
£12.50
(plus tax if applicable)
Add to cart
Buy Knowledge Pack
10 articles for £75.00
(plus taxes if applicable)
Add to cart

IET members benefit from discounts to all IET publications and free access to E&T Magazine. If you are an IET member, log in to your account and the discounts will automatically be applied.

Learn more about IET membership 

Recommend Title Publication to library

You must fill out fields marked with: *

Librarian details
Name:*
Email:*
Your details
Name:*
Email:*
Department:*
Why are you recommending this title?
Select reason:
 
 
 
 
 
Electronics Letters — Recommend this title to your library

Thank you

Your recommendation has been sent to your librarian.

© IEE
Published

The authors have developed a scanning tunnelling optoelectronic microscope (STOEM) and measured electric pulses with a 2.5 ps width corresponding to a time resolution better than 2 ps. This substantial improvement was realised using low temperature-grown GaAs (LT-GaAs) for the photoconductive semiconductor switch (PCSS) on the probe and by reducing the probe dimension.

Inspec keywords: scanning tunnelling microscopy; signal sampling; semiconductor device testing; high-speed optical techniques; photoconducting switches; integrated circuit testing; gallium arsenide; electric variables measurement; probes

Other keywords: GaAs; low temperature-grown GaAs; time resolution; photoconductive semiconductor switch; ultrafast measurement; 2 ps; ultra-fast electrical signals; 2.5 ps; probe; scanning tunnelling optoelectronic microscope

Subjects: Production facilities and engineering; Electric and magnetic variables measurement methods; Manufacturing processes; Semiconductor integrated circuits; Measurement; Testing; Optoelectronics manufacturing; Other instrumentation and measurement systems; Semiconductor devices; Photoelectric devices; Instrumentation

References

    1. 1)
      • K. Takeuchi , Y. Kasahara . High-speed optical sampling measurement ofelectrical waveform using a scanning tunnelling microscope. Appl. Phys. Lett. , 26 , 3548 - 3549
    2. 2)
      • K. Takeuchi , A. Mizuhara , Y. Kasahara . Application of scanning tunnellingmicroscope to high-speed optical sampling measurement. IEEE Trans. Instrumentation Measurement , 3 , 815 - 818
    3. 3)
      • G. Nunes , M.R. Freeman . Picosecond resolution in scanning tunnelling microscopy. Science , 1029 - 1032
    4. 4)
      • S. Weiss , D.F. Ogletree , D. Botkin , M. Salmeron , D.S. Chemla . Ultrafast scanning probe microscopy. Appl. Phys. Lett. , 18 , 2567 - 2569
    5. 5)
      • S. Gupta , M.Y. Frankel , J.A. Valdmanis , J.F. Whitaker , C.A. Mourou , F.W. Smith , A.R. Calawa . Subpicosecond carrier lifetime in GaAs grownby molecular beam epitaxy at low temperatures. Appl. Phys. Lett. , 25 , 3276 - 3278
    6. 6)
      • N. Atique , E.S. Harmon , J.C.P. Chang , J.M. Woodall , M.R. Melloch , N. Otsuka . Electrical and structural properties of Be- and Si-doped low-temperature-grownGaAs. J. Appl. Phys. , 4 , 1471 - 1476
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19961162
Loading

Related content

content/journals/10.1049/el_19961162
pub_keyword,iet_inspecKeyword,pub_concept
6
6
Loading
Print this page
This is a required field
Please enter a valid email address