GaAs-based 0.98 µm multiquantum well tunnelling injection lasers grown by MOVPE have been designed and fabricated. 200 µm long singlemode ridge lasers are characterised by Ith = 3 mA, f-3 dB = 45 GHz, f-3 dB(measured) = 43 GHz , and f-3 dB(max) = 84 GHz for pulsed operation. For CW operation the corresponding modulation bandwidths are 43 and 76 GHz, respectively.
References
-
-
1)
-
Y. Arakawa ,
T. Takahashi
.
Effect of nonlinear gain on modulation dynamics in quantum-well lasers.
Electron. Lett.
,
2 ,
169 -
170
-
2)
-
Ralston, J.D., Weisser, S., Larkins, E.C., Schoenfelder, A., Daleiden, J., Czotscher, K., Maier, M., Fleissner, J., Benz, W., Rosenzweig, J.: `Advanced epitaxial growth and device processing techniques for ultra-highspeed (>40 GHz) directly-modulated semiconductor lasers', Photonics West '96, 27 January 1996, San Jose, California.
-
3)
-
B. Zhao ,
T.R. Chen ,
A. Yariv
.
Effect of state filling on the modulation response and the thresholdcurrent of quantum well lasers.
Appl. Phys. Lett.
,
16 ,
1930 -
1932
-
4)
-
I. Suemune ,
L.A. Coldren ,
M. Yamanishi ,
Y. Kan
.
Extremely wide modulation bandwidth in a low threshold current strainedquantum well laser.
Appl. Phys. Lett.
,
15 ,
1378 -
1380
-
5)
-
H. Yoon ,
H.C. Sun ,
P.K. Bhattacharya
.
Dynamic linewidth of tunnelling injection laser.
Electron. Lett.
,
20 ,
1675 -
1677
-
6)
-
H.C. Sun ,
L. Davis ,
S. Sethi ,
J. Singh ,
P. Bhattacharya
.
Properties of a tunnelling injection quantum-well laser: recipe for a‘cold’ device with a large modulation bandwidth.
IEEE Photonics Technol. Lett.
,
8 ,
870 -
872
-
7)
-
H. Yoon ,
A.L. Gutierrez-Aitken ,
R. Jambunathan ,
J. Singh ,
P.K. Bhattacharya
.
A ‘cold’ InP-based tunnelling injection laser with greatlyreduced Auger recombination and temperature dependence.
IEEE Photonics Technol. Lett.
,
9 ,
974 -
976
http://iet.metastore.ingenta.com/content/journals/10.1049/el_19961156
Related content
content/journals/10.1049/el_19961156
pub_keyword,iet_inspecKeyword,pub_concept
6
6