High power top-surface emitting oxide confined vertical-cavity laser diodes

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High power top-surface emitting oxide confined vertical-cavity laser diodes

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Large area MBE grown vertical-cavity surface emitting laser diodes (VCSELs) for high power emission at ~980 nm wavelength have been fabricated. Top emitting devices of 146 µm active diameter deliver 160 mW at 20% wallplug efficiency and 180 mW maximum output power in a junction-up configuration.

Inspec keywords: molecular beam epitaxial growth; semiconductor growth; surface emitting lasers; semiconductor lasers

Other keywords: top-surface emitting devices; 146 micron; 160 mW; 980 nm; 20 percent; junction-up configuration; active diameter; MBE; maximum output power; 180 mW; oxide confined devices; power emission; wallplug efficiency; vertical-cavity laser diodes; VCSELs

Subjects: Laser resonators and cavities; Semiconductor lasers; Lasing action in semiconductors; Vacuum deposition; Design of specific laser systems; Laser resonators and cavities; Epitaxial growth

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