Room temperature lasing from InGaAs quantum dots

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Room temperature lasing from InGaAs quantum dots

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Alternating molecular beam epitaxy is used to form InGaAs quantum dots by utilising the two-dimensional to three-dimensional Stranski-Krastanow growth transition. The quantum dots are embedded in a separate confinement heterostructure to form laser diodes. Lasing is observed from excited states in the quantum dots from room temperature down to 80 K. Pronounced state-filling is observed in the quantum dot lasers at room temperature. As the temperature is decreased, the state-filling becomes less pronounced, which compensates for the bandgap increase and leads to lasers whose lasing wavelength is very weakly dependent on temperature.

Inspec keywords: indium compounds; quantum well lasers; molecular beam epitaxial growth; III-V semiconductors; semiconductor epitaxial layers; semiconductor growth; gallium arsenide; semiconductor quantum dots

Other keywords: room temperature lasing; bandgap increase; alternating molecular beam epitaxy; 80 to 293 K; 2D/3D Stranski-Krastanow growth transition; separate confinement heterostructure; quantum dots; laser diodes; III-V semiconductors; state-filling; InGaAs; lasing wavelength

Subjects: Design of specific laser systems; II-VI and III-V semiconductors; Vacuum deposition; Semiconductor lasers; Epitaxial growth; Semiconductor superlattices, quantum wells and related structures; Lasing action in semiconductors; Electrical properties of semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

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