A multilevel interconnection technology using both a new pillar structure consisting of multi-stacked metal layers and chemical-mechanical polishing planarisation has been proposed. This has several advantages such as self-aligned interconnection and decreased via-pillar resistance. The via-pillar resistance becomes one third of conventional via. In addition this method can improve the planarisation capability of inter-metal dielectrics.
References
-
-
1)
-
T. Ohba
.
Chemical-vapour-deposited tungsten for vertical wiring.
MRS Bulletin
,
11 ,
46 -
52
-
2)
-
Park, I.S., Park, C.S., Choi, G.H., Wee, Y.J., Kim, I.C., Koh, K.M., Lee, H.-D., Lee, S.I., Lee, M.Y.: `Fabrication of 256 Mbit DRAM with a fully planarised double level interconnection', Proc. of IEEE VMIC Conf., 1995, Santa Clara, p. 45.
-
3)
-
Park, M., Kim, G.H., Park, J.M., Kim, S.G., Hyeon, Y.C., Koo, J.G., Nam, K.S.: `Multilevel interconnection technology using new pillar formation methodand planarisation', Proc. of IEEE CMP-MIC Conf., 1996, Santa Clara, p. 291.
-
4)
-
R.V. Joshi ,
M. Tejwani
.
Low temperature, low resistivity sub-half micron via/interconnect structureusing reaction of Al-alloys and germane.
IEDM Tech. Dig.
,
257 -
260
-
5)
-
Ueda, T., Uehara, T., Nishio, M.: `One mask interconnect / via formation technology horizontal mask patternto vertical topography', Proc. of IEEE VMIC Conference, 1995, Santa Clara, p. 38.
-
6)
-
K. Ueno ,
K. Ohto ,
K. Tsunenari ,
K. Kajiyana ,
K. Kikuta ,
T. Kikkawa
.
A quartermicron planarised interconnection technology with self-alignedplug.
IEDM Tech. Dig.
,
305 -
308
-
7)
-
Pramanik, D., Jam, V., Gabriel, C., Weling, M., Baker, D., Eakin, J.: `A submicron triple level metallisation process for high performance applicationspecific circuits', Proc. of IEEE VMIC Conf., 1992, Santa Clara, p. 37.
-
8)
-
Park, M., Kim, S.G., Park, J.M., Kim, G.H., Koo, J.G., Yoo, H.J., Nam, K.S., Jang, J.: `The characteristics of gap filling and planarisation by using multi-stepsputtering PECVD and CMP process', Proc. of IEEE VMIC Conf., 1995, Santa Clara, p. 271.
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