Low crosstalk (< –40 dB) in 1.55 µm high speed OEIC photoreceiver arrays with novel on-chip shielding

Author(s): A.L. Gutierrez-Aitken ; P. Bhattacharya ; K.-C. Syao ; K. Yang ; G.I. Haddad ; X. Zhang
DOI: 10.1049/el:19961140

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Author(s): A.L. Gutierrez-Aitken ¹ ; P. Bhattacharya ¹ ; K.-C. Syao ¹ ; K. Yang ¹ ; G.I. Haddad ¹ ; X. Zhang ¹
- Affiliations: 1: Department of Electrical Engineering and Computer Science, Solid State Electronics Laboratory, The University of Michigan, Ann Arbor, USA
Source: Volume 32, Issue 18, 29 August 1996, p. 1706 – 1708
DOI: 10.1049/el:19961140 , Print ISSN 0013-5194, Online ISSN 1350-911X

InP-based monolithically integrated pin/HBT photoreceiver arrays with novel on-chip shielding, to reduce electrical and optical crosstalk, have been fabricated and characterised. The photoreceiver array with on-chip plated gold shielding demonstrated an adjacent-channel crosstalk of < –40 dB, which represents a 17 dB reduction compared to –23 dB in an array without such shielding. The arrays demonstrate bandwidths of 5–7 GHz.

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Low crosstalk (< –40 dB) in 1.55 µm high speed OEIC photoreceiver arrays with novel on-chip shielding

Low crosstalk (< –40 dB) in 1.55 µm high speed OEIC photoreceiver arrays with novel on-chip shielding

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