0–40 GHz GaAs MESFET 1:2 distributed signal distributor IC

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0–40 GHz GaAs MESFET 1:2 distributed signal distributor IC

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The authors describe a GaAs MESFET 1:2 signal distributor with a new distributed configuration. A key feature of the design is alternately distributed sections that have a common gate line. The 1:2 signal distributor IC has a gain of ~1.3 dB and a bandwidth of ~40 GHz. This is the widest bandwidth amongst all reported GaAs MESFET signal distributor ICs.

Inspec keywords: optical communication equipment; gallium arsenide; MESFET integrated circuits; III-V semiconductors; field effect MMIC

Other keywords: distributed signal distributor IC; 0 to 40 GHz; GaAs; common gate line; 40 Gbit/s; 1.3 dB; 40 GHz; GaAs MESFET IC

Subjects: Optical communication; Microwave integrated circuits; Other field effect integrated circuits

References

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