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0–40 GHz GaAs MESFET 1:2 distributed signal distributor IC

0–40 GHz GaAs MESFET 1:2 distributed signal distributor IC

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The authors describe a GaAs MESFET 1:2 signal distributor with a new distributed configuration. A key feature of the design is alternately distributed sections that have a common gate line. The 1:2 signal distributor IC has a gain of ~1.3 dB and a bandwidth of ~40 GHz. This is the widest bandwidth amongst all reported GaAs MESFET signal distributor ICs.

Inspec keywords: optical communication equipment; gallium arsenide; MESFET integrated circuits; III-V semiconductors; field effect MMIC

Other keywords: distributed signal distributor IC; 0 to 40 GHz; GaAs; common gate line; 40 Gbit/s; 1.3 dB; 40 GHz; GaAs MESFET IC

Subjects: Optical communication; Microwave integrated circuits; Other field effect integrated circuits

References

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      • Kimura, S., Imai, Y.: `A 16-dB DC-to-50-GHz InAlAs/InGaAs HEMT distributed baseband amplifierusing a new loss compensation technique', IEEE GaAs IC Symp. Dig., 1994, p. 96–99.
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      • Yamane, Y., Ohhata, M., Kikuchi, H., Asai, K., Imai, Y.: `A 0.2 µm GaAs MESFET technology for 10 Gbit/s digital and analogueICs', IEEE MTT-S Int. Microwave Symp. Dig., June 1991, Q-1, p. 513–516.
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      • Kimura, S., Imai, Y.: `DC-to-40-GHz GaAs MESFET distributed baseband amplifier IC', Asia-Pacific Microw. Conf. Tech. Dig., 1994, 1, p. 249–2529-4, .
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      • T. Otsuji , M. Yoneyama , Y. Imai , S. Yamaguchi , T. Enoki , Y. Umeda , E. Sano . 46 Gbit/s multiplexer and 40 Gbit/s demultiplexer IC modules using InAlAs/InGaAs/InPHEMTs. Electron. Lett. , 685 - 686
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      • Kimura, S., Imai, Y., Miyamoto, Y.: `Novel distributed amplifying techniques for 40-Gbit/s optical communication', IEEE GaAs IC Symp. Dig., 1995, p. 193–196.
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