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Silicon-on-insulator optical intensity modulator based on waveguide-vanishing effect

Silicon-on-insulator optical intensity modulator based on waveguide-vanishing effect

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  • Author(s): C.Z. Zhao 1 ; E.K. Liu 2 ; G.Z. Li 2 ; L. Guo 3
    • View affiliations
    • Affiliations: 1: Microelectronics Institute, Xidian University, Shaanxi, People's Republic of China
      2: Department of Electronic Engineering, Xi'an Jiaotong University, Shaanxi, People's Republic of China
      3: Department of Electronic Engineering, Sichuan Institute of Solid-State Circuits, Sichuan, People's Republic of China
  • Source: Volume 32, Issue 18, 29 August 1996, p. 1667 – 1668
    DOI:  10.1049/el:19961110 , Print ISSN 0013-5194, Online ISSN 1350-911X
© IEE
Published

A silicon-on-insulator (SOI) optical intensity modulator has been proposed and fabricated, and is based on the large cross-section singlemode rib waveguide condition, the waveguide-vanishing effect and the free-carrier plasma dispersion effect. In the modulator the SOI technique uses silicon and silicon dioxide thermal bonding and back-polishing. The insertion loss of the device is measured to be 3.65 dB at a wavelength of 1.3 µm. The modulation depth is 96% at an injection current of 45 mA. Response time is ~160 ns.

Inspec keywords: optical modulation; rib waveguides; optical planar waveguides; silicon-on-insulator; optical losses; optical switches

Other keywords: singlemode rib waveguide condition; response time; modulation depth; Si-SiO2; 3.65 dB; waveguide-vanishing effect; free-carrier plasma dispersion effect; optical intensity modulator; back-polishing; thermal bonding; insertion loss; injection current; 1.3 micrometre; SOI; 160 ns; 45 mA

Subjects: Optical communication; Metal-insulator-semiconductor structures; Optical communication devices, equipment and systems; Optical waveguides and couplers; Integrated optics; Optical beam modulators; Optical waveguides; Integrated optics

References

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