A linear self-biasing MOS transconductance amplifier is presented. A linear V-I transfer characteristic is obtained by square-rooting the drain current of a MOS transistor in the saturation region. The main advantage of the circuit is that its transconductance gain and input linear range can be adjusted independently. Simulation results are included to confirm the feasibility of the technique.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19961107
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