20 Gbit/s GaAs distributed direct-coupled amplifier

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20 Gbit/s GaAs distributed direct-coupled amplifier

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The authors describe advanced design techniques for direct-coupled amplifiers used in high speed optical communication systems. GaAs MESFET ICs designed with these techniques showed 1.5 times the bandwidth of conventional amplifiers and operated at a speed of 20 Gbit/s.

Inspec keywords: field effect MMIC; III-V semiconductors; gallium arsenide; distributed amplifiers; DC amplifiers; MMIC amplifiers; MESFET integrated circuits; optical communication equipment; digital communication; wideband amplifiers

Other keywords: distributed direct-coupled amplifier; GaAs MESFET ICs; GaAs; 20 Gbit/s; advanced design techniques; high speed optical communication systems

Subjects: Amplifiers; Microwave integrated circuits; Other field effect integrated circuits; Optical communication

References

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      • R. Majidi-Ahy , C.K. Nishimoto , M. Riaziat , M. Glenn , S. Silverman , S.-L. Weng , Y.-C. Pao , G.A. Zdasivk , S.G. Bandy , Z.C.H. Tan . 5–100 GHz InP coplanar waveguide MMIC distributed amplifier. IEEE Trans. , 1986 - 1993
    2. 2)
      • NEL GaAs ICs and Related Products, p.29, 1995–1996.
    3. 3)
      • Kimura, S., Imai, Y.: `DC-to-40-GHz GaAs MESFET distributed baseband amplifier IC', APMC'94 Tech. Dig., 1994, 1, p. 249–252.
    4. 4)
      • M. Ohhata , M. Togashi , K. Murata , S. Yamaguchi . 25 Gbits/s selector module using 0.2-µm GaAs MESFET technology. Electron. Lett. , 950 - 951
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