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The authors propose a new type of distributed Bragg reflector (DBR) using InAlAs-oxide/InP by lateral oxidation for long wavelength vertical-cavity surface-emitting lasers. When oxidation was performed at 525°C, the InAlAs layer's refractive index changed from 3.2 to 2.5. Results show that the peak reflectivity of a 10 pair DBR is 96.9% at 1.29 µm.
Inspec keywords: indium compounds; distributed Bragg reflector lasers; III-V semiconductors; semiconductor lasers; surface emitting lasers; aluminium compounds; refractive index; oxidation
Other keywords:
Subjects: Lasing action in semiconductors; Semiconductor lasers; Surface treatment and degradation in semiconductor technology; Laser resonators and cavities; Surface treatment (semiconductor technology); Design of specific laser systems; Laser resonators and cavities