20 Gbit/s photoreceivers have been realised by cascading three distributed pre-amplifiers purposely designed and processed with a GaAs PHEMT 0.2 µm gate length technology. The bandwidth is 16 GHz, and an average equivalent input noise as low as 12 pA/√Hz up to 14 GHz is obtained. The transimpedance is 63 dBΩ.
References
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Kimura, S., Imai, Y., Umeda, Y., Enoki, T.: `A 16-dB DC-to-50 GHz InAlAs/InGaAs HEMT distributed baseband amplifier using a new loss compensation technique', GaAs IC Symp., 1994, p. 96–99.
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Darwazeh, I., Moreira, P., Borjak, A., O'Reilly, J.: `A distributed optical receiver preamplifier with unequal gate/drain impedances', IEEE Microwave and Millimeter-Wave Monolithic Circuits Symp., 1995, p. 199–202.
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Blanconnier, P., Giraudet, L., Olivier-Martin, F., Praseuth, J.P., Legros, E.: `High speed PIN photodiodes for 10–20 Gbit/s high sensitivity photoreceivers', ESSDERC 96, September 1996, Bologna.
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http://iet.metastore.ingenta.com/content/journals/10.1049/el_19961094
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