Shallow and low-resistive contacts to p-In0.53Ga0.47As based on Pd/Sb and Pd/Ge metallisations

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Shallow and low-resistive contacts to p-In0.53Ga0.47As based on Pd/Sb and Pd/Ge metallisations

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Ohmic contacts on moderately doped In0.53Ga0.47As (p = 4 × 1018 cm-3) have been prepared using Pd/Zn/Sb/Pd and Pd/Zn/Pd/Ge metallisations. Low contact resistivities have been achieved, i.e. 3–7 × 10-7 Ωcm2. These Au free metallisations exhibit superior surface and interface morphology, with reaction depths well below 50 nm.

Inspec keywords: III-V semiconductors; ohmic contacts; zinc; integrated circuit metallisation; gallium arsenide; germanium; indium compounds; palladium; antimony; contact resistance

Other keywords: low-resistive contacts; interface morphology; reaction depths; Pd-Zn-Sb-Pd-In0.53Ga0.47As; surface morphology; ohmic contacts; Pd-Zn-Pd-Ge-In0.53Ga0.47As; shallow contacts; contact resistivities

Subjects: Metallisation and interconnection technology; Semiconductor-metal interfaces

References

    1. 1)
      • L.C. Wang , M.H. Park , F. Deng , S.S. Clawson , A. Lau , D.M. Hwang , C.J. Palmstrøm . Ge/Pd(Zn) Ohmic contact scheme on p-InP based on the solid phase regrowthprinciple. Appl. Phys. Lett. , 3310 - 3312
    2. 2)
      • Park, M.H., Wang, L.C., Deng, F., Clawson, A., Lau, S.S., Cheng, J.Y., Hwang, D.M., Palmstrøm, C.J.: `Non-Au based shallow low-resistance ohmic contacts on p-InP', Proc. 7th Int. Conf. InP & Rel. Mater., 9–13 May 1995, Sapporo, Japan, p. 672–673.
    3. 3)
      • Leech, P.W., Ressel, P., Reeves, G.K., Zhou, W., Kuphal, E.: `Thermal stability in Pd-based contacts to p-type In', MRS Symp. Proc. Ser., 1996, 406, p. 419–424.
    4. 4)
      • Ressel, P., Strusny, H., Vogel, K., Würfl, J., Wesch, W., Lenk, G., Kuphal, E., Fritzsche, D., Kräutle, H., Mause, K.: `Zn-implanted Pd-based ohmic contacts to p-In', Proc. 7th Int. Conf. InP & Rel. Mater., 9–13 May 1995, Sapporo, Japan, p. 668–671.
    5. 5)
      • J.M. Vandenberg , H. Temkin , R.A. Hamm , M.A. DiGiuseppe . Structural study of alloyed gold metallization contacts on InGaAsP/InPlayers. J. Appl. Phys. , 7385 - 7389
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